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EDS (Energy Dispersive Spectrometer)
SEM/EDS- Scanning Electron Microscopy/ Energy Dispersive Spectroscopy
Scanning electron microscopy (SEM) is a method for high resolution surface imaging. The SEM uses electron for imaging. The advantages of SEM over light microscopy include greater magnification and much greater depth of field. Different elements and surface topography emit different amounts of electrons; due to this the contrast in the electron micrograph (picture) is representative of surface topography and composition.
Energy dispersive spectroscopy (EDS) measures the number of x-rays produced by a solid sample when irradiated by electrons versus the energy of these x-rays. The EDS technique identifies and quantifies the element constituents of the sample.
Technical Capabilities
Signal Detected: SEI/ BSE/ Characteristic x-rays
Elements Detected: B-U
Detection Limits: 0.1 – 1 at%
Depth Resolution: 0.5 – 3 μm
Applications for SEM/EDS Analysis
• Study fracture surfaces -both metal and polymer
• Study microstructure of a sample
• Obtain elemental information on surface
• Identify foreign materials (particles/ contaminants/ corrosions)
• Determine the thickness & composition of coatings
Relevant Industries for Auger Analysis
- Aerospace
- Automotive
- Biomedical/biotechnology
- Compound Semiconductor
- Data Storage
- Defense
- Displays
- Electronics
- Industrial Products
- Lighting
- Pharmaceutical
- Photonics
- Polymer
- Semiconductor
- Solar Photovoltaic
- Telecommunications
Strengths
- Quick, “first look” analysis
- Versatile, inexpensive, and widely available
- Quantitative for some samples (flat, polished, homogeneous)
- Small area analysis (as small as 30 nanometers)
- Semi-quantitatively analysis
- Excellent surface sensitivity
- Good depth resolution
Limitations
- Semi-quantification for samples that are not flat, polished, and homogeneous
- Size restrictions on samples
- Samples must be vacuum compatible (not ideal for organic material)
- Analysis (or coating) may influence subsequent surface analysis
- Limited sensitivity for low-Z elements