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Focused Ion Beam (FIB)

A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise cross sections of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A dual beam FIB/SEM integrates these two techniques into one tool thus enabling sample prep and SEM imaging without handling the sample.

As a sample preparation tool, the FIB can accurately produce cross-sections of a sample that are impossible to create otherwise:

• FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections.
• FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.
• FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely.
• It is a good option for products that are hard to cross section, such as a soft polymer that is challenging to polish.

Technical Capabilities

Signal Detected: Electrons

Depth Resolution: 10 Angstroms

Imaging/Mapping: Yes

Lateral Resolution/Probe Size: 7 nm

Applications

• SEM, STEM and TEM sample preparation
• High resolution cross-section images of small, hard-to-access sample features
• Probe pad formation
• On-chip circuit modification

Relevant Industries for Auger Analysis

• Biomedical/biotechnology
• Data storage
• Optics
• Semiconductor
• Telecommunications

Strengths

• Best method to cross-section small targets
• Rapid, high-resolution imaging
• Good grain contrast imaging
• Versatile platform that supports many other tools

Limitations

• Vacuum compatibility typically required
• Imaging may spoil subsequent analyses
• Residual Ga on analytical face
• Ion beam damage may limit image resolution
• Cross-section area is relatively small